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1

[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Reduction of layout variations with stress-compensated hybrid STI fills: a comprehensive analysis

Stadele, M., Ilicali, G., Landgraf, E., Goldbach, M., Finsterbusch, S., Lindolf, J., Radecker, J., Uhlig, B.

Year:

2008

Language:

english

File:

PDF, 1.09 MB

english, 2008

2

Schottky-barrier tunneling spectroscopy of a 2-D electron system in delta-doped Si(100) layers

J. Lindolf, B. Klehn, U. Kunze, W. Kiunke, I. Eisele

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 299 KB

english, 1994

3

Binary blazed reflection gratings

Collischon, M., Haidner, H., Kipfer, P., Lang, A., Sheridan, J. T., Schwider, J., Streibl, N., Lindolf, J.

Journal:

Year:

1994

Language:

english

File:

PDF, 806 KB

english, 1994

4

Observation of 1D electron states at the boundary between an MOS and a Schottky contact on Si(100) by electron tunneling

U. Kunze, T. Drebinger, B. Klehn, J. Lindolf

Journal:

Surface Science

Year:

1994

Language:

english

File:

PDF, 383 KB

english, 1994

5

Transition from MOS to Schottky-contact behaviour in Yb-SiO2-Si tunneling junctions with extremely thin SiO2 layer

P. Bauernschmitt, J. Lindolf, U. Kunze

Journal:

Microelectronic Engineering

Year:

1993

Language:

english

File:

PDF, 319 KB

english, 1993

6

Study of the influence of the phosphorus pressure on the preparation of nominally undoped semi-insulating InP wafers

Kipfer, P., Lindolf, J., Hofmann, D., Müller, G.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 709 KB

english, 1991